Process for producing a thin film of a flouride

Details Process for producing a thin film of a flouride Process for producing a thin film of a flouride

1997-06-18

1999-04-06

Gorgos, Kathryn L.

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of coating supply or source outside of primary...

427575, 427576, 65388, B05D 306

Patent

active

058915311

ABSTRACT:
A process for producing a thin film of a fluoride comprising reacting a gaseous fluorinating agent and gas of a volatile organometallic compound in a gas phase in a reactor, wherein a plasma of the gaseous fluorinating agent obtained by activating the gaseous fluorinating agent by microwave under a condition of electron cyclotron resonance is used as a fluorine source, and the fluoride is deposited on a substrate by reacting the plasma of the gaseous fluorinating agent with the gas of a volatile organometallic compound at outside of an area of generation of the plasma. A thin film of a fluoride which contains very little impurities such as carbon, oxygen, and organic substances, and is highly pure, transparent, and consolidated is produced.

REFERENCES:
patent: 4378987 (1983-04-01), Miller et al.
patent: 4610708 (1986-09-01), Sarhangi et al.
patent: 4718929 (1988-01-01), Power et al.
patent: 4801468 (1989-01-01), Ishihara et al.

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