Process for producing a superconducting thin film at relatively

Details Process for producing a superconducting thin film at relatively Process for producing a superconducting thin film at relatively

1992-09-24

1993-08-17

Weisstuch, Aaron

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

20419224, 505731, 505816, H01L 3924, C23C 1434, C23C 1435

Patent

active

052368947

ABSTRACT:
A process for depositing a superconducting thin film composed mainly of compound oxide such as LnBa.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) on a substrate such as MgO, SrTiO.sub.3 or silicon by sputtering technique, characterized in that a negative bias is applied to the substrate during the sputtering stage without heating the substrate.

REFERENCES:
patent: 4912087 (1990-03-01), Aslam et al.
B. Y. Jin et al, Advanced Ceramic Materials, vol. 2, No. 3B, Special Issue (1987), pp. 436-443.
R. P. Bomer et al, Vacuum, vol. 20, No. 7, pp. 285-290 (1970).

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