Process for producing a silicon single crystal, and heater for c

Details Process for producing a silicon single crystal, and heater for c Process for producing a silicon single crystal, and heater for c

1997-11-25

2000-09-12

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 30, 117217, 117932, C30B 1514

Patent

active

061172308

ABSTRACT:
A process for producing a silicon single crystal by the Czochralski method, utilizes a heater which is intended for heating a silicon-filled crucible and is arranged below the crucible. The process has energy delivered to the melt at least some of the time inductively using a coiled heater arranged under the crucible. The heater is in the form of a wound coil.

REFERENCES:
patent: 4619730 (1986-10-01), Suzuki et al.
patent: 4622211 (1986-11-01), Suzuki et al.
patent: 4659423 (1987-04-01), Kim et al.
patent: 4915775 (1990-04-01), Katsuoka et al.
patent: 5162072 (1992-11-01), Azad
patent: 5360599 (1994-11-01), Cueman et al.
Patent Abstracts of Japan vol. 8, No. 241 (C-250) a JP 59 121183 A (Fujitsu UU).
Giess et al.: "Combination Heater--Magnetic Soleroid Coils for Suppressing elt Convention in Crystal Growth", IBM Technical Disclosure Bulletin, Bd. 26, No. 9, Feb. 1984 NY US, p. 4716, XP00205U780.

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