Process for producing a silicon nitride diffusion barrier on a s

Details Process for producing a silicon nitride diffusion barrier on a s Process for producing a silicon nitride diffusion barrier on a s

1977-11-14

1979-01-30

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

C23C 1500

Patent

active

041371410

ABSTRACT:
The process according to this invention makes it possible to produce a silicon nitride diffusion barrier on a semiconductor substrate, such as III-V semiconductor substrate and particularly a GaAs substrate, the produced diffusion barrier being efficient at temperatures as high as 900.degree. C during a long period.
It comprises the following steps:

REFERENCES:
patent: 3591477 (1971-07-01), Pomerantz
patent: 3600218 (1971-08-01), Pennebaker
patent: 3849276 (1974-11-01), Greiner
C. S. Mogab et al., "Effect of Reactant Nitrogen Pressure on the Microstructure and Properties of Reactively Sputtered Silicon Nitride Films," vol. 122, J. Electrochem. Soc., pp. 815-822 (1975).
S. M. Hu et al., "Silicon Nitride Films by Reactive Sputtering," J. Electrochem. Soc. vol. 114, pp. 826-833 (1967).

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