Process for producing a semiconductor substrate

Details Process for producing a semiconductor substrate Process for producing a semiconductor substrate

1997-07-23

1999-11-09

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

438459, 438745, 438753, 438691, 438751, C30B 2522, H01L 21304, H01L 21306, H01L 2131

Patent

active

059806338

ABSTRACT:
A bonded substrate and a process for its production is provided to solve the problem involved in the heat treatment which tends to cause troubles such as break, separation and warpage of the substrates bonded. A single-crystal semiconductor epitaxially grown on a porous semiconductor substrate is bonded to an insulator substrate, and the semiconductor substrate is removed by etching, grinding, or a combination of the both, where no heat treatment is carried out or, even if carried out, only once.

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