Fishing – trapping – and vermin destroying
Patent
1994-08-09
1997-01-07
Crane, Sara W.
Fishing, trapping, and vermin destroying
437 68, 437927, 437974, 257521, 257527, 257622, 257627, H01L 21302
Patent
active
055916651
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
The invention relates to a method for producing a semiconductor structure having a plurality of vertical and at least one lateral semiconductor component integrated in a disk-shaped semiconductor body having a first surface and a second surface opposite the first surface, with the lateral semiconductor components being disposed beneath the first surface, and the plurality vertical semiconductor components extending between the first and the second surfaces. The at least one lateral semiconductor component being disposed inside a partial structure which is insulated from adjacent regions. The thickness of the semiconductor body is reduced in the region of the partial structure. As used herein, the term semiconductor component is intended to mean semiconductor device or devices integrated into a semiconductor body.
A method of producing, such a semiconductor structure is disclosed in EP-A-0,193,172. In this instance, a vertical MOS transistor is described which is disposed in a semiconductor body along with a lateral switching circuit. The MOS transistor and the lateral switching circuit are isolated from one another by a p-n junction. It does not follow from EP-A-0,193,172 to integrate a plurality of vertical components in the semiconductor body. A disadvantage in the disclosed type of insulation EP-A-0,193,172 is that the space-charge region present at the p-n junction requires a great deal of space that cannot be used for the insertion of components. Moreover, the doping of the regions lying adjacent to the isolation cannot be freely selected; namely--for obtaining a space-charge region--a p-doped and an n-doped zone must always be present alternatingly so that a p-n junction results. Furthermore, it is disadvantageous that, at a p-n junction, the correct polarity (in the blocking direction) must be heeded, because otherwise the isolating effect of the junction is lost. The permitted potential in the one region is therefore a function of that in the other region--located behind the p-n junction.
SUMMARY OF THE INVENTION
The object of the invention is to provide a method of producing a semiconductor structure having a plurality of integrated semiconductor components, and to provide such a semiconductor structure that includes, in addition to at least one lateral semiconductor component, a plurality of vertical semiconductor components which can be operated independently thereof, in the smallest space.
The object for the method is accomplished in accordance with the invention by means of the method for producing a semiconductor structure including at least one partial structure having a lateral semiconductor component with an electrically-insulating vertical wall surrounding the partial structure and extending into the semiconductor body a predetermined depth; and a recess formed in the semiconductor body in a region on a side opposite the partial structure such that the bottom of the recess is approximately equal to the depth of the vertical wall. The object for providing the semiconductor structure is accomplished in accordance with the invention by a semiconductor structure produced by the method of the invention.
In the method, no damage occurs in the crystal structure. To produce the semiconductor structure, known diffusion methods are used, in which the contacting and passivation of predetermined surface regions can be performed with conventional methods. The method permits the use of identical partial structures for power and signal components. The vertical components differ from the lateral ones in the doping of the deeper layers, among other things.
In the semiconductor structure according to the invention, a plurality of vertical semiconductor components are integrated in a semiconductor body. The semiconductor structure can be designed such that lateral semiconductor components, serving as signal elements for vertical power components positioned outside of the partial structures, are disposed inside the partial structures.
Other modifications of the invention are t
REFERENCES:
patent: 4977101 (1990-12-01), Yoder et al.
Bodensohn Alexander
Henkel Heinz
Crane Sara W.
Daimler-Benz Aktiengesellschaft
Hardy David B.
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