Process for producing a semiconductor memory device

Details Process for producing a semiconductor memory device Process for producing a semiconductor memory device

1990-09-28

1991-12-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 90, 437915, H01L 2170

Patent

active

050700340

ABSTRACT:
A semiconductor memory device is provided with memory cells each having a capacitor for accumulating an electric charge and a transistor for charging and discharging the capacitor. The memory device comprises a substrate, an insulator layer formed thereon and a monocrystalline semiconductor layer formed thereon. The capacitor is composed of said monocrystalline semiconductor layer, the insulator layer and the substrate while the transistor is formed in the monocrystalline semiconductor layer.

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Sturm et al., "A Three-Dimensional Folded Dynamic RAM in Beam-Recrystallized Polysilicon", IEEE Electron Device Letters, vol. EDL-5, No. 5, May 1984 pp. 151-153.

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