Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1997-08-25
2000-10-31
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
438572, 438606, 438751, 438752, 134 13, H01L 21302
Patent
active
061402486
ABSTRACT:
A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al.sub.x Ga.sub.1-x As layer with an upper surface, where x.ltoreq.0.40; applying a contact metallization made of a non-noble metallic material to the Al.sub.x Ga.sub.1-x As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al.sub.x Ga.sub.1-x As layer by etching with an etching mixture of hydrogen peroxide.gtoreq.30% and hydrofluoric acid.gtoreq.40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0.ltoreq.x.ltoreq.1 and the upper surface of the Al.sub.x Ga.sub.1-x As layer is roughened by etching with nitric acid 65% at temperatures of between 0.degree. C. and 30.degree. C.
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Fischer Helmut
Lang Gisela
Nirschl Ernst
Sedlmeier Reinhard
Goudreau George
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
Stemer Werner H.
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