Process for producing a semiconductor device including an ion im

Details Process for producing a semiconductor device including an ion im Process for producing a semiconductor device including an ion im

1979-05-18

1981-05-12

Dean, R.

Metal treatment

Compositions

Heat treating

29571, 29578, 148187, 357 23, 357 54, 357 91, 427 94, 4272551, 4272554, H01L 21265, H01L 2131

Patent

active

042669855

ABSTRACT:
Impurity ions implanted into a semiconductor silicon substrate are not redistributed during a heating of the substrate from the substrate to the film. Such redistribution does not occur due to the direct nitridation of the silicon substrate for forming the silicon nitride film.

REFERENCES:
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patent: 3520722 (1970-07-01), Scott
patent: 3798061 (1974-03-01), Yamazaki
patent: 3891468 (1975-06-01), Ito et al.
patent: 3924024 (1975-12-01), Naber et al.
patent: 3959025 (1976-05-01), Polinsky
patent: 4105805 (1978-08-01), Glendinning et al.
patent: 4113515 (1978-09-01), Kooi et al.
patent: 4170502 (1978-10-01), Watakabe
Spielmann et al., "Nitrogen Reactions on Silicon Wafers" I.B.M. Tech. Discl. Bull., vol. 10, No. 3, Aug. 1967, p. 333.

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