Process for producing a semiconductor device having hemispherica

Details Process for producing a semiconductor device having hemispherica Process for producing a semiconductor device having hemispherica

1998-07-20

2000-10-31

Niebling, John F.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438238, 438239, 438255, 438444, 438488, H01L 2120

Patent

active

061402044

ABSTRACT:
Ingredient gas is first supplied into a reacting section disposed in an apparatus for chemical vapor deposition. Subsequently, a silicon film is deposited on a wafer under a condition that temperature at the upstream side of a direction of the ingredient gas flow inside the reacting section is higher than that at the downstream side thereof.

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patent: 5910019 (1999-06-01), Watanabe et al.
Watanabe, et al. "Device application and structure observation for hemispherical-grained Si" Journal of Applied Physics, vol. 71, n. 7, pp. 3538-3543 (1992).

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