Process for producing a semiconductor device

Details Process for producing a semiconductor device Process for producing a semiconductor device

1979-08-29

1981-06-09

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576T, 148 15, 148187, 357 52, H01L 2122

Patent

active

042715822

ABSTRACT:
In a method of smoothing the edges of a window through a PSG film of a semiconductor device, a masking film is provided under the PSG film, so as to prevent impurities of the PSG film from penetrating into semiconductor substrate during the heating of the PSG film for the smoothing of the edges. A masking film, for example, an Si.sub.3 N.sub.4 film, does not, however, inhibit the penetration of hydrogen gas, which can improve the properties of an MIS semiconductor device.

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patent: 4151007 (1979-04-01), Levenstein et al.
patent: 4224089 (1980-09-01), Nishimoto et al.

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