Process for producing a semiconductor device

Details Process for producing a semiconductor device Process for producing a semiconductor device

1978-12-21

1980-09-23

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 29571, H01L 21225

Patent

active

042240891

ABSTRACT:
In a process for producing a semiconductor device having a protecting glass film containing an impurity of a first conductivity type, a masking film is formed on the surface of at least a portion of a region of a second conductivity type opposite to the first conductivity type, this region being within a semiconductor substrate. The masking film is not etched by an etching agent for the protecting glass film and prevents the impurity issuing out of the protecting glass film from entering into the region when the surface of the protecting glass film is smoothed by heating it. After the heating treatment the masking film is at least partly removed to make the window for an electrode contact to the region of the second conductivity type.

REFERENCES:
patent: 3806371 (1974-04-01), Barone
patent: 3825442 (1974-07-01), Moore
patent: 3972756 (1976-08-01), Nagase et al.
patent: 3986903 (1976-10-01), Watrous
patent: 4023195 (1977-05-01), Richman
patent: 4043848 (1977-08-01), Bazin
patent: 4079504 (1978-03-01), Kosa
patent: 4113533 (1978-09-01), Okumura et al.

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