Process for producing a semiconductor device

Details Process for producing a semiconductor device Process for producing a semiconductor device

1978-10-30

1980-07-01

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 148187, 148188, H01L 21223

Patent

active

042104734

ABSTRACT:
Disclosed is a process for producing a semiconductor device, especially, a high speed silicon gate field effect semiconductor device, by diffusing an impurity substance, such as arsenic or phosphorus, into a polycrystalline silicon layer to be converted into a silicon gate having a high electroconductivity and into portions of a single crystal silicon substrate to be converted into source and drain regions, in a sealed capsule, at an elevated temperature, under a vacuum. During the above-mentioned diffusing operation, the impurity substance can diffuse into the polycrystalline silicon layer at a higher diffusing speed than into the single crystal silicon substrate.

REFERENCES:
patent: 3615873 (1971-10-01), Sluss et al.
patent: 3658606 (1972-04-01), Lyons et al.
patent: 3699646 (1972-10-01), Vadasz
patent: 3852128 (1974-12-01), Kreuzer
patent: 3883372 (1975-05-01), Lin
patent: 3972756 (1976-08-01), Nagase et al.
patent: 3986903 (1976-10-01), Watrous

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