Process for producing a predetermined doping in side walls and b

Fishing – trapping – and vermin destroying

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437 52, 437919, H01L 21385

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active

047820365

ABSTRACT:
A process for producing a predetermined doping level in side walls and bases of trenches which have been etched into semiconductor substrates which involves treating the substrate with a gaseous atmosphere containing organic compounds of silicon, oxygen and boron in amounts sufficient to form a boron silicate glass, thermally decomposing the organic compounds to form the boron silicate glass as a layer deposit along the side walls and the bases and thereafter diffusing the layer deposit into the side walls and the base. This is followed by removing the layer deposit remaining after the predetermined amount of diffusion has taken place.

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patent: 4645564 (1987-02-01), Morie et al.

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