Process for producing a pin layer sequence on a perovskite and a

Details Process for producing a pin layer sequence on a perovskite and a Process for producing a pin layer sequence on a perovskite and a

1998-10-22

2000-10-17

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

257290, 257295, 438104, 438146, 423593, H01L 2100

Patent

active

061330639

ABSTRACT:
In a process for producing a pin layer sequence on a perovskite of the type ABO.sub.3 which has AO layers, AO layers are converted such that a p-conductive B-oxide rich layer and, disposed therebetween an ABO.sub.3 layer with intrinsic conductivity are formed. Also, a perovskite of the type ABO.sub.3 with a layer sequence on the surface which includes an AO-enriched (ABO.sub.3)-layer, a B-oxide rich layer and disposed therebetween an ABO.sub.3 layer and an electronic building element comprising such a perovskite.

REFERENCES:
patent: 5270298 (1993-12-01), Ramesh
patent: 5491102 (1996-02-01), Desu et al.
patent: 5838034 (1998-11-01), Fang et al.

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