Semiconductor device manufacturing: process – Gettering of substrate
Reexamination Certificate
2007-03-27
2007-03-27
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Gettering of substrate
C257SE21318
Reexamination Certificate
active
10733352
ABSTRACT:
A catalyst element remaining in a first semiconductor film subjected to a first heat treatment (crystallization) is moved and concentrated/collected by subjecting a second semiconductor film which is formed on the first semiconductor film and contains a rare gas element to a second heat treatment. That is, the rare gas element is incorporated into the second semiconductor film to generate a strain field as a gettering site.
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Isaac Stanetta
Lebentritt Michael
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
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