Process for producing a metal to compound semiconductor contact

Details Process for producing a metal to compound semiconductor contact Process for producing a metal to compound semiconductor contact

1978-12-29

1980-07-08

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 357 15, 427 84, H01L 2126, H01L 2166

Patent

active

042115876

ABSTRACT:
A process for producing a "metal to compound semiconductor" contact having a potential barrier of predetermined height. By this is meant a Schottky contact or an ohmic contact. The process comprises, before deposition of the metal, perfectly cleaning the semiconductor so as to remove in particular oxygen, then depositing sulphur or selenium on its surface by the action of hydrogen sulphide or hydrogen selenide, and, after deposition of the metal, effecting a heat treatment of the contact. In this way, an ohmic contact is obtained. The Schottky contact is obtained by the action of hydrogen sulphide or hydrogen selenide and then pure oxygen at very low pressure.

REFERENCES:
patent: 3069604 (1962-12-01), Ruehrwein
patent: 3468659 (1969-09-01), Belasco et al.
patent: 3897275 (1975-07-01), Borrelo et al.
patent: 3904449 (1975-09-01), DiLorenzo et al.
patent: 3964084 (1976-06-01), Andrews, Jr. et al.
patent: 3968019 (1976-07-01), Hanazono et al.
patent: 4037197 (1977-07-01), Raychaudhuri
patent: 4045248 (1977-08-01), Shannon et al.
patent: 4075651 (1978-02-01), James
patent: 4110488 (1978-08-01), Risko
patent: 4116722 (1978-09-01), Kamei et al.
Duraev et al., ". . . Non-rectifying Contacts . . . GaAs", Instruments and Exp. Techniques, Nov.-Dec. (1969), 1596-1597.
Miyao et al., "A Method of Cleaning Ga.sub.0.5 Al.sub.0.5 Sb . . . ", Jour. Appl. Phys. 48 (Mar. 1977), 1383.

Affiliated with

Also associated with

Rating

Process for producing a metal to compound semiconductor contact does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing a metal to compound semiconductor contact , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing a metal to compound semiconductor contact will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-559215