Process for producing a luminous element of group III nitride se

Details Process for producing a luminous element of group III nitride se Process for producing a luminous element of group III nitride se

1996-12-11

1998-11-10

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 46, 438509, 438796, 148DIG65, 148DIG113, H01L 2100

Patent

active

058343261

ABSTRACT:
A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

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Amano et al., "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)", Japanese Journal of Applied Physics, vol. 28, No. 12, pp. L2112-L2114, Dec. 1989.
Nakamura et al., "Thermal Annealing Effects on P-Type Mg-Doped GaN Films," Japanese Journal of Applied Physics, vol. 31, pp. L139-142, Feb. 1992.
Khan et al., "Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers", Appl. Phys. Lett. 66, pp. 2046-2047, Apr. 17, 1995.

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