Process for producing a layer of a metal silicide by applying mu

Details Process for producing a layer of a metal silicide by applying mu Process for producing a layer of a metal silicide by applying mu

1983-06-20

1985-06-11

Smith, John D.

Coating processes

Electrical product produced

Welding electrode

204192SP, 204192S, 204192F, 427 55, 427 93, 427 88, 427 91, H01L 21285, H01L 21324

Patent

active

045228450

ABSTRACT:
Multichromatic radiation is applied rapidly to silicon or polysilicon placed in contact with a silicide-forming metal to form metal silicide having low resistivity without deleterious later diffusion of dopants in adjacent single crystal or polysilicon. The radiation is applied to a metal deposited on silicon or to a metal codeposited with or to silicide deposited from a metal-Si composite target. The temperatures preferably rise to between 600.degree. C. and 1200.degree. C. and the total heating periods are less than about one minute, with 10 to 30 seconds being typical.

REFERENCES:
patent: 4417347 (1983-11-01), Mulca
D. R. Nichols, "Co-Sputtered Refractory-Metal Silicides for Wafer-Fabrication Applications", Microelectronic Manufacturing and Testing, May 1982.
T. S. Shibata et al., "Metal Silicide Reactions Induced by CW Scanned Laser and Electron Beams," J. Electrochem. Soc., vol. 128, p. 637, 1981.
R. T. Fulks et al., "Rapid Isothermal Annealing of Ion Implantation Damage Using a Thermal Radiation Source," App. Phys. Lett., vol. 39, p. 604, 1981.
D. F. Downey et al., "Activation and Process Characterization of Infrared Rapid Isothermal and Furnace Annealing Techniques," Solid State Technology, Sep. 1982, p. 87.
C. J. Russo, "VLSI Applications of Rapid Isothermal Annealing," Ionics, Aug. 1982, p. 139.
R. Iscoff, "Wafer Annealing Systems," Semiconductor International, Nov. 1981, p. 69.
S. P. Murarka, Silicides for VLSI Applications, p. 24-28, Academic Press, 1983.
M. Von Allmen et al., "Laser Quenched Metal-Silicon Alloys," Laser and Electron-Beam Solid Interactions and Material Processing, ed. J. F. Gibbons et al., p. 559, 1981.
T. W. Sigmon, "Silicide Formation Using Laser and Electron Beams," Laser and Electron-Beam Solid Interactions and Material Processing, ed. J. F. Gibbons et al., p. 511, 1981.
R. T. Fulks et al., "MoSi.sub.2 Formation By Rapid Isothermal Annealing," IEEE Electron Device Letters, Jul. 1982.
H. J. Geipel, Jr. et al., "Composite Silicide Gate Electrodes-Interconnections for VLSI Device Technologies," IEEE J. Solid State Circuits, vol. SC-15, No. 4, Aug. 1980, p. 482.
S. Yanagisawa et al., "Reaction of Mo Thin Films on Si (100) Surfaces," J. Electrochem. Soc., vol. 127, p. 1150, 1980.
T. Y. Tan et al., "Crystallization of Amorphous Silicides By Energy Beam Annealing," Laser-Solid Interactions and Laser Processing-1978, ed. S. D. Ferris et al., p. 533, 1979.

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