Process for producing a layer containing silicon and photoelectr

Details Process for producing a layer containing silicon and photoelectr Process for producing a layer containing silicon and photoelectr

1980-07-29

1982-03-23

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 148 15, 357 2, 357 15, 357 30, 427 39, 427 74, 427 84, 427 86, 423349, H01L 3106, H01L 3118

Patent

active

043214207

ABSTRACT:
Process for producing layers of silicon or one of its alloys in pure or doped form and able to absorb optical radiation, the layers being of limited thickness, it comprising a first stage of depositing the layer by chemical decomposition of a gaseous mixture containing silane at a temperature close to the crystallization temperature and a second stage of treating in a hydrogen plasma at a lower temperature.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4151058 (1979-04-01), Kaplan et al.
T. Nakashita et al., "Electronic Density of States in Chemically Vapor-Deposited Amorphous Silicon", Japan J. Appl. Phys., vol. 18, No. 2, pp. 405-406, Feb. 1979.

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