Process for producing a layer containing silicon

Details Process for producing a layer containing silicon Process for producing a layer containing silicon

1981-06-17

1982-08-17

Hoffman, James R.

Coating processes

Electrical product produced

Photoelectric

427 87, H01L 3118, H01L 3102, H01L 3106, C23C 1106

Patent

active

043449840

ABSTRACT:
The process consists of introducing into the silicon-containing layer at the same time as silicon deposition, another element of column IVa of the periodic classification in a proportion equal to or below 5% of the number of silicon atoms and greater than 0.1%. According to a preferred variant, this element is germanium. Deposition takes place at a temperature close to the crystallization temperature T. The process can comprise a subsequent phase during which the deposited layer undergoes heat treatment in an atmosphere of a plasma containing hydrogen or one of its isotopes at a temperature below the crystallization temperature T of the layer.

REFERENCES:
Cretella et al., "Hydrogenated a-Si.sub.x Ge.sub.1-x for Solar Cells", Extended Abstracts, vol. 80-1, (1980), May, Princeton, Abstract No. 361, p. 896.

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