Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-05-07
2011-11-01
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S090000, C117S091000, C117S092000, C117S201000, C117S202000
Reexamination Certificate
active
08048224
ABSTRACT:
Embodiments of the invention relate to a process for producing a III-N bulk crystal, wherein III denotes at least one element selected from group III of the periodic system, selected from Al, Ga and In, wherein the III-N bulk crystal is grown by vapor phase epitaxy on a substrate, and wherein the growth rate is measured in real-time. By actively measuring and controlling the growth rate in situ, i.e. during the epitaxial growth, the actual growth rate can be maintained essentially constant. In this manner, III-N bulk crystals and individualized III-N single crystal substrates separated therefrom, which respectively have excellent crystal quality both in the growth direction and in the growth plane perpendicular thereto, can be obtained.
REFERENCES:
patent: 6325850 (2001-12-01), Beaumont et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 6616757 (2003-09-01), Melnik et al.
patent: 6936357 (2005-08-01), Melnik et al.
patent: 2003/0070610 (2003-04-01), Dadgar et al.
patent: 2005/0000406 (2005-01-01), Janzen et al.
patent: 2005/0164044 (2005-07-01), Melnik et al.
patent: 2005/0212001 (2005-09-01), Melnik et al.
patent: WO 99/20816 (1999-04-01), None
patent: WO 01/68955 (2001-09-01), None
S. Porowski, “Near Defect Free GaN Substrates”, MRS Internet J. Nitride Semiconduct. Res. 451, 1999, G 1.3, 11 pgs.
M. K. Kelly et al., “Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff”, Jpn. J. Appl. Phys., vol. 38, 1999, pp. L217-L219.
K. Motoki et al., “Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate”, Jpn. J. Appl. Phys., vol. 40, 2001, pp. L140-L143.
Y. Melnik et al., “Properties of Free-Standing GaN Bulk Crystals Grown by HVPE”, Mat. Res. Soc. Symp. Proc., vol. 482, 1998, pp. 269-274.
Hwa-Mok Kim et al., “Preparation of 30x30 mm2Free-Standing GaN Wafer by Mechanical Liftoff and Optical Properties in The Backside of The Free GaN by Cathodoluminescence”, Mat. Res. Soc. Symp., vol. 639, 2001, pp. G6.51.1-G6.51.6.
S. Fujiwara et al., “Crystal growth of ZnSe by PVT using a semi-open ampule”, Journal of Crystal Growth 169 (1996), pp. 660-664.
Y. Huang et al., “Spatial characterization of a 2 in GaN wafer by Raman spectroscopy and capacitance-voltage measurements”, Journal of Physics D: Applied Physics 37 (2004), pp. 2814-2818.
N. Kato et al., “Evaluation of strain in AIN thin films grown on sapphire and 6H-SiC by metalorganic chemical vapor deposition”, Phys. Stat. Sol. (c) 3, No. 6, (2006) pp. 1671-1674.
T. Suzuki et al., In-situ monitoring of AIN crystal growth on 6H-SiC by the use of a pyrometer, Materials Science Forum, vols. 457-460 (2004), pp. 1565-1568.
Eichler Stefan
Habel Frank
Leibiger Gunnar
Foley & Lardner LLP
Freiberger Compound Materials GmbH
Kunemund Robert M
LandOfFree
Process for producing a III-N bulk crystal and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing a III-N bulk crystal and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing a III-N bulk crystal and a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4262497