Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having multiple emitter or collector structure
Patent
1997-10-29
1999-12-21
Quach, T. N.
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having multiple emitter or collector structure
438361, 438366, 438368, H01L 21331
Patent
active
060048557
ABSTRACT:
A process for producing a small shallow-depth high-performance bipolar structure having low parasitic capacitance is disclosed wherein an active base region of a P-type material is first defined in a substrate, a portion of which is of N-type material in a device formation area surrounded by an isolating oxide regions, such as trenches or the like. An N-doped polysilicon layer is then defined over the active base region and over field oxide regions located atop the isolating trenches. This N-poly region, when treated, will provide an interdigitated collector with self aligning emitter region aligned over the active base region. After appropriate spaced isolation layers are placed, a P-poly layer is laid down and heat treated to cause the P-type doping material to diffuse into the substrate contact to the active base region. A thin buried collector layer, approximately 1.5- to 2-micron thick, can be used as a result of the combination of an interdigitated collector design and a thin epitaxial region in which the active base is located; this combination contributing to a low effective collector resistance that compensates for the increased resistance associated with a thinner buried collector layer. The process provides for collector contacts in close proximity to the active device region permitting fabrication of a small device with very low parasitic capacitance.
REFERENCES:
Fleming, D., et al., "Open-Collector Structure Lateral PNP Transistors", IBM Technical Disclosure Bulletin, vol. 19, No. 2, Jul. 1976, pp. 569-570.
Fleming, D.J., et al., "Open Collectorstwctor . . . ", IBM Technical Disclosure Bulletin, vol. 19, No. 2, Jul. 1976, pp. 569-570.
Fleming, D.J., et al., "Open Collector . . . " IBM Tech. Disc. Bull., 19(2), Jul. 1976, pp. 569-570.
Brown George William
Pollock Larry Joseph
Quach T. N.
Synergy Semiconductor Corporation
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