Process for producing a gas detecting element

Metal working – Method of mechanical manufacture – Assembling or joining

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29583, H01G 900

Patent

active

043744567

ABSTRACT:
A gas detecting element including a semiconductor wafer formed of a transition-metal oxide with an electrode layer bonded to both sides of the wafer and a protective layer overlaid on the surface of the electrode layer. A metal lead wire is attached to each electrode layer by means of an electrically conductive adhesive wherein the region at which the metal lead wire is bonded to the electrode layer is reinforced by an insulating adhesive that covers the region. A process for producing such a gas detecting element is also disclosed.

REFERENCES:
patent: 3054709 (1974-03-01), Freestone et al.
patent: 3671818 (1974-06-01), Chiba
patent: 3795048 (1974-03-01), Tachibana et al.
patent: 3816906 (1974-06-01), Falkenberg
patent: 4053864 (1977-10-01), Rodriguez et al.
patent: 4206173 (1980-06-01), Yamaguchi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for producing a gas detecting element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing a gas detecting element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing a gas detecting element will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1369872

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.