Process for producing a GaAs or InP semiconductor by pre-implant

Details Process for producing a GaAs or InP semiconductor by pre-implant Process for producing a GaAs or InP semiconductor by pre-implant

1982-11-24

1985-10-08

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148175, 148187, 357 63, 357 91, H01L 21263, H01L 2124

Patent

active

045458243

ABSTRACT:
Process for producing a semiconductor component by diffusion with prior ion implantation. According to the invention, an impurity of oxygen, fluorine, chlorine or bromine having chemical affinity with the diffusion impurity is implanted in the semiconductor substrate of GaAs or InP before thermally diffusing Zn, Cd or Fe in the substrate. The diffusion is thus limited in depth.

REFERENCES:
patent: 4017887 (1977-04-01), Davies et al.
patent: 4240096 (1980-12-01), Hiraki et al.
patent: 4252580 (1981-02-01), Messick
patent: 4372032 (1983-02-01), Collins et al.
patent: 4383869 (1983-05-01), Liu
patent: 4391651 (1983-07-01), Yoder
patent: 4469528 (1984-09-01), Berth et al.
Martin et al., Jour. Appl. Phys. 51 (1980) 2840.
Littlejohn et al., Radiation Effects 10 (1971) 185.

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