Process for producing a crystalline silicon nitride powder

Details Process for producing a crystalline silicon nitride powder Process for producing a crystalline silicon nitride powder

1995-06-20

1997-01-21

Lewis, Michael

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423324, C01B 21068

Patent

active

055957188

ABSTRACT:
A crystalline silicon nitride powder having a high specific surface area and an enhanced sintering property is produced with a high producibility and a large scale, by calcining a silane material comprising at least one nitrogen-containing silane compound in a nitrogen-containing inert gas mixed with 0.1 to 5%, based on the total volume of the mixed gas, of molecular oxygen, preferably at 600.degree. to 1200.degree. C.; baking the resultant amorphous silicon nitride powder in a nitrogen-containing inert gas preferably at 1400.degree. to 1700.degree. C.; and milling the resultant crystalline silicon nitride powder in a mixed gas atmosphere comprising 5 to 40% by volume of molecular oxygen and the balance consisting of an inert gas preferably at 0.degree. to 100.degree. C.

REFERENCES:
patent: 4716028 (1987-12-01), Kasai et al.

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