Process for producing a crystalline silicon ingot

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Reexamination Certificate

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C117S011000, C117S013000, C117S083000

Reexamination Certificate

active

07141114

ABSTRACT:
An improved process for producing a crystalline silicon ingot, a crystalline silicon wafer and a photovoltaic cell using the directional solidification process, and more particularly to loading and preparing a mold for the process of directional solidification. At least one rod polysilicon section and at least one chunk polysilicon, chip polysilicon or granular polysilicon is loaded into the mold, increasing packing density and thermal conductivity of the polysilicon contents while reducing contamination and resources expended to process a production cycle.

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