Process for producing a carbon film on a substrate

Details Process for producing a carbon film on a substrate Process for producing a carbon film on a substrate

1999-10-12

2000-12-12

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

2041921, 427294, 427553, 427595, C23C 1400

Patent

active

061595586

ABSTRACT:
A method for producing a carbon film on a substrate, comprising the steps of (a) depositing a carbon layer of a predetermined thickness onto the substrate, e.g. using off-axis sputtering, the carbon layer having predominantly graphitic or amorphous structure, and (b) treating the carbon layer by means of an radio-frequency discharge in a helium atmosphere wherein the substrate is held at a negative dc bias voltage of a preselected value, where the thickness of the carbon layer deposited in step a) is chosen not greater than the longitudinal stop range of the helium ions corresponding to the bias voltage used in step b). After producing a first carbon layer of a predetermined thickness, a next carbon layer is likewise produced upon the first carbon layer and the procedure can be repeated until the total thickness of the layers attains a desired final thickness.

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