Process for preventing melt-back in the production of aluminum-c

Details Process for preventing melt-back in the production of aluminum-c Process for preventing melt-back in the production of aluminum-c

1985-09-30

1986-12-30

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569L, 29576E, 148172, H01L 21208

Patent

active

046327096

ABSTRACT:
A process for the production of semiconductor devices includes: (1) forming a thin semiconductor film containing no aluminum on a first semiconductor layer containing aluminum that is disposed on a substrate one or more (2) forming channels on said thin semiconductor film in such a manner that the channel or channels reach or go through said first semiconductor layer to expose a portion of said substrate, resulting in a channelled substrate for succeeding crystal growth thereon, and (3) producing by epitaxial growth crystalline layers on said channelled substrate by the use of a crystal growth solution having a supersaturation which is high enough to prevent said first semiconductor layer from undergoing meltback.

REFERENCES:
patent: 4099999 (1978-07-01), Burnham et al.
patent: 4110133 (1978-08-01), Garrett et al.
patent: 4255206 (1981-03-01), Endler et al.
patent: 4371968 (1983-02-01), Trussell et al.
patent: 4509996 (1985-04-01), Greene et al.
patent: 4547396 (1985-10-01), Botez et al.
patent: 4547956 (1985-10-01), Bouadma et al.
patent: 4561915 (1985-12-01), Mito

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