Process for preparing single crystal silicon using crucible...

Details Process for preparing single crystal silicon using crucible... Process for preparing single crystal silicon using crucible...

2006-10-24

2006-10-24

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S014000, C117S020000, C117S025000, C117S031000, C117S218000, C117S219000

Reexamination Certificate

active

07125450

ABSTRACT:
The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G0, as a function of radius (i.e., G0(r)), particularly at or near the central axis. Additionally, crucible rotation modulation is utilized to obtain an axially uniform oxygen content therein.

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