Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1995-11-28
1998-11-17
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117 8, 117 9, 117947, C30B 102
Patent
active
058370536
ABSTRACT:
A single crystal material is prepared by forming a layer of an amorphous substance over a surface of a substrate of a single crystal having the same chemical composition as that of the amorphous substance, the resulting composite material is heated to epitaxially grow the amorphous layer into a single crystal layer. A composite material for producing such a single crystal material is also disclosed which includes a substrate of a single crystal, and a layer of an amorphous substance having the same chemical composition as that of the substrate, the layer having such a thickness that the layer as a whole can epitaxially grow to make a single crystal layer.
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Japanese Journal of Applied Physics vol. 31, No. 11 Nov. 1992, pp. 3664-3666.
Morishita Tadataka
Wang Furen
International Superconductivity Technology Center
Kunemund Robert
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