Process for preparing silicon carbide foam

Details Process for preparing silicon carbide foam Process for preparing silicon carbide foam

1996-01-16

1997-09-16

Foelak, Morton

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

264 44, 264 51, 264 291, 264 297, 423345, 423445, 423449, 501 88, 521918, 521 64, 502101, 502180, 502416, 502418, C08J 928

Patent

active

056681887

ABSTRACT:
A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolized in an inert atmosphere to form a SiC foam.

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Mazdiyasni, K.S. et al. American Ceramic Society Journal, vol. 61 (11-12): pp. 504-508 (1978) "Characterization of Organosilicon-Infiltrated Porous Reaction-Sintered Si3N4".

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