Process for preparing Si or Ge epitaxial film using fluorine oxi

Details Process for preparing Si or Ge epitaxial film using fluorine oxi Process for preparing Si or Ge epitaxial film using fluorine oxi

1987-02-18

1989-01-24

Hearn, Brian E.

Excavating

Peat excavators

148DIG48, 148DIG57, 148DIG58, 148DIG93, 156613, 437082, 437173, 437942, 437963, 437 88, H01L 21205

Patent

active

048001732

ABSTRACT:
Process for producing a valence electron controlled functional crystalline film by introducing (i) a film forming gaseous raw material, (ii) a halogen series gaseous oxidizing agent to oxidize the raw material (i), and (iii) a gaseous raw material to impart a valence electron controlling agent separtely into a reaction region of a film deposition space and chemically reacting them to generate plural kinds of precursors containing excited precursors and to let at least one kind of said precursors to act as a film forming supplier whereby said crystalline film is formed on a selected substrate being kept at a predetermined temperature in the film deposition space.

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