Process for preparing semiconductor devices

Details Process for preparing semiconductor devices Process for preparing semiconductor devices

1977-07-06

1980-08-19

Lawrence, Evan K.

Metal working

Method of mechanical manufacture

Assembling or joining

29413, 295274, 125 13R, H01L 21304

Patent

active

042176891

ABSTRACT:
A process for preparing semiconductor devices by forming an insulation coating, such as a low melting point glass, on the surface of a semiconductor substrate and then forming a shaved groove through the insulation coating to the inner part of the semiconductor substrate. The insulation coating is one that is easily subject to cracking when shaved by a high speed rotating diamond blade having substantially parallel side surfaces.
The low melting point glass and the semiconductor substrate are shaved by a diamond blade having a tapered edge which rotates in high speed, without forming a crack in the insulation coating or breaking a part of the semiconductor substrate. The semiconductor substrate is divided along the shaved groove in a dicing step to obtain separated semiconductor pellets.

REFERENCES:
patent: 2365085 (1944-12-01), Joyce
patent: 2607259 (1952-08-01), Forster
patent: 3230625 (1966-01-01), Meyer
patent: 3241219 (1966-03-01), Hamm
patent: 3608186 (1971-09-01), Hutson
patent: 3636397 (1972-01-01), Addamiano et al.
patent: 4016855 (1977-04-01), Mimata
Curran, L., Electronics, vol. 23, No. 24, Nov. 1970, pp. 70, 71, and 73.

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