Process for preparing semiconductor device having active base re

Details Process for preparing semiconductor device having active base re Process for preparing semiconductor device having active base re

1982-03-11

1984-04-10

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148187, 357 34, 357 91, H01L 21265, H01L 21225, H01L 2126

Patent

active

044419325

ABSTRACT:
A process for preparing a semiconductor device having a walled emitter structure covering at least one side surface with a dielectric layer for separation of devices comprises a step of forming a base by implantation of ions with a resist mask for base; a step of forming an emitter by implantation of ions from an emitter-opening part; and a step of formation an active base in a base just below said emitter by implantation of ions from said emitter-opening part.

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patent: 4372030 (1983-02-01), Saitoh
Gaur et al., IBM-TDB, 23, (1980), 1895.
Akasaka et al., Technical Digest of IEDM 1979, p. 189.

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