Process for preparing semiconductor device

Details Process for preparing semiconductor device Process for preparing semiconductor device

1991-08-22

1993-06-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437101, 437247, 437909, 148DIG1, 148DIG11, H01L 21265

Patent

active

052197670

ABSTRACT:
Disclosed is a process for preparing a semiconductor device which comprises a step of growing, in a molecular beam epitaxial growth apparatus, a P-type silicon epitaxial layer which becomes the base, on an N-type silicon epitaxial layer which becomes the collector; a step of growing, in a molecular beam epitaxial growth apparatus, an antimony doped N-type silicon amorphous layer which becomes the emitter, on said P-type silicon epitaxial layer; and a step of converting the above N-type silicon amorphous layer to an N-type silicon epitaxial layer by the solid phase epitaxy method according to the annealing heat treatment.

REFERENCES:
patent: 4563807 (1986-01-01), Sakai et al.
patent: 4853342 (1989-08-01), Taka et al.
patent: 4968635 (1990-11-01), Hamaraki

Affiliated with

Also associated with

Rating

Process for preparing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for preparing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for preparing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1042157