Process for preparing semiconducting silicon carbide sintered bo

Details Process for preparing semiconducting silicon carbide sintered bo Process for preparing semiconducting silicon carbide sintered bo

1979-02-09

1980-06-24

Cooper, Jack

Plastic and nonmetallic article shaping or treating: processes

Carbonizing to form article

With carbonizing, then adding carbonizable material and...

106 44, 252 623C, 252504, 252516, 264 296, 264 65, 264125, C04B 3556, C04B 3558, C04B 3564

Patent

active

042094747

ABSTRACT:
A silicon carbide sintered body exhibiting N-type semiconductivity is produced by shaping a mixture of .beta.-silicon carbide, boron additive and a carbonaceous additive into a green body and sintering the body in an atmosphere containing nitrogen to produce a sintered body having a density of at least about 90% and pores which are substantially non-interconnecting.

REFERENCES:
patent: 3615930 (1971-10-01), Knippenberg et al.
patent: 3853566 (1974-12-01), Prochazka
patent: 3926857 (1975-12-01), Matkin et al.
patent: 3954483 (1976-05-01), Prochazka
patent: 3960577 (1976-06-01), Prochazka
patent: 3966855 (1976-06-01), Hollenberg et al.
patent: 4004934 (1977-01-01), Prochazka
patent: 4133689 (1979-01-01), Stroke

Affiliated with

Also associated with

Rating

Process for preparing semiconducting silicon carbide sintered bo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for preparing semiconducting silicon carbide sintered bo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for preparing semiconducting silicon carbide sintered bo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1480367