Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon
Patent
1991-11-13
1993-09-07
Chaudhuri, Olik
Chemistry of inorganic compounds
Silicon or compound thereof
Elemental silicon
427213, C01B 3302
Patent
active
052426718
ABSTRACT:
The hydrogen content of polysilicon can be reduced by heat treatment. The process is preferably conducted on polysilicon particles in bead-like form produced by chemical vapor deposition in a fluidized bed. The heat treatment is preferably conducted at a temperature of 1020.degree.-1200.degree. C. for a time from about 6 hours to about 1 hour sufficient to reduce the hydrogen content, and insufficient to cause agglomeration of the particles being treated. In order to reduce the tendency of particles to agglomerate at the process temperature employed, the particle bed is preferably maintained in motion during the dehydrogenation. The products produced by the process can have a hydrogen content of 30 ppma or less. These improved products can be used to produce monocrystalline silicon for the production of semiconductor devices.
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Allen Robert H.
Boone James E.
Chaudhuri Olik
Ethyl Corporation
Horton Ken
Spielman, Jr. E. E.
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