Process for preparing p-n junctions having a p-type ZnO film

Details Process for preparing p-n junctions having a p-type ZnO film Process for preparing p-n junctions having a p-type ZnO film

2006-04-25

2006-04-25

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S008000, C428S642000, C438S046000

Reexamination Certificate

active

07033435

ABSTRACT:
A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 1015acceptors/cm3.

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