Process for preparing nitride film

Details Process for preparing nitride film Process for preparing nitride film

1998-09-23

2000-08-22

Meeks, Timothy

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

42725526, 427255391, 427255394, 4272554, C23C 1634

Patent

active

061068985

ABSTRACT:
A process for preparing a nitride film by a chemical vapor deposition method, which entails reacting a material gas including tert-butyl hydrazene as the main component as the main component of a nitrogen source with a material gas of an organometallic compound, a metal halide or a metal hydride to deposit the nitride film on a substrate.

REFERENCES:
Patent Abstract of Japan, vol. 1998, Oct. 31, 1998, JP 10 190135, Jul. 21, 1998.
Derwent Publications Ltd., Derwent Abstracts, AN 1998-129551, JP 63 072661, Apr. 2, 1988.
Nishide et al., Journal of Crystal Growth, vol. 189-190, pp. 325-329, Jun., 1998.
Shuichi Nishide, et al., Journal of Crystal Growth, vol. 189-190, pp. 325-329, "Study of the Pyrolysis of Tertiarbutylhydrazine and GaN Film", Jun. 1998.
Patent Abstracts of Japan, vol. 098, No. 012, Oct. 31, 1998 JP 10 182575, Jul. 7, 1998.
Patent Abstracts of Japan, vol. 095, No. 010, Nov. 30, 1995, JP 07 180058, Jul. 18, 1995.
Derwent Abstracts, AN 85-108095, JP 60 052578, Mar. 25, 1985.
Database WPI, Derwent Publications, AN 1995-334208, JP 07-230991, Aug. 29, 1995.
Y. Kasai, et al., Extended Abstracts of The Japan Society of Applied Physics, No. 2, p. 607, "Measurement of Vapor Pressure of TBH, (CH.sub.3).sub.3 :Low-Poisonous Nitrogen Source for CVD", Oct. 1997 (with English Translation).

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