Process for preparing nano-porous metal oxide semiconductor...

Details Process for preparing nano-porous metal oxide semiconductor... Process for preparing nano-porous metal oxide semiconductor...

2005-08-16

2005-08-16

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S085000, C438S104000, C438S479000

Reexamination Certificate

active

06929970

ABSTRACT:
A process for preparing a layer of a nano-porous metal oxide semiconductor comprising the steps of: (i) providing metal oxide semiconductor nano-particles prepared by a wet precipitation process, (ii) heating said nano-particles at a temperature in the range of 250 to 600° C., (iii) preparing a dispersion of said heat-treated nano-particles from step (ii), (iv) applying said dispersion prepared in step (iii) to a support to produce a coating; and (v) subjecting said coating to a pressure in the range of 100 to 1000 bar at a temperature below 250° C.; a layer of a nano-porous metal oxide semiconductor obtained by this process; and a photovoltaic device comprising a layer of a nano-porous metal oxide semiconductor obtained by this process.

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