Process for preparing layers of silicon carbide on a silicon sub

Details Process for preparing layers of silicon carbide on a silicon sub Process for preparing layers of silicon carbide on a silicon sub

1974-11-29

1976-06-01

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148174, 156610, 156612, 156613, 156614, 252 623C, 423345, 423346, H01L 21205, C01B 3136

Patent

active

039606198

ABSTRACT:
In a process for producing an epitaxial layer of hexagonal silicon carbide on a silicon monocrystal substrate by simultaneous reduction or thermal decomposition of a gas mixture containing silicon halides and organosilanes, or mixtures thereof, hydrocarbons, and H.sub.2 on said substrate, the improvement consisting of having water or a water-forming compound present in the gas mixture, which leads to especially pure silicon carbide, useful, e.g. as material for light emitting diodes.

REFERENCES:
patent: 3157541 (1964-11-01), Heywang et al.
patent: 3171755 (1965-03-01), Reuschel et al.
patent: 3335049 (1967-08-01), Pultz
patent: 3386866 (1968-06-01), Ebert et al.
patent: 3519472 (1970-07-01), Dyne et al.
patent: 3527626 (1970-08-01), Brander
patent: 3755541 (1973-08-01), Strepkoff
Brander, R. W., "Epitaxial Growth of SiC Layers" Silicon Carbide Textbook--1973, Marshall et al., Editors--Sept. 20, 1973.
Jackson, et al., "Fabrication of Epitaxial SiC Film on Silicon" Trans. Metallurgical Soc. AIME, vol. 33, Mar. 1965, pp. 468-472.
Bean et al., "Some Properties of Vapor Deposited SiC" J. Electrochem. Soc., vol. 114, No. 11, Nov. 1967, pp. 1158-1161.

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