Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se
Patent
1994-11-07
1995-08-08
Powell, William
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Producing josephson junction, per se
156647, 156654, 1566591, 156667, 505820, 505922, 505410, 505729, B44C 122, C23F 100
Patent
active
054398754
ABSTRACT:
A Josephson junction device comprises a single crystalline substrate including a principal surface having a first and a second regions of which at least lattice distance of exposed lattices are slightly different from each other and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second portions respectively positioned on the first and the second regions of the substrate, which are constituted of single crystals of the oxide superconductor, lattices of the one shifts at angle of 45.degree. to that of the other, and a grain boundary between said two portions, which constitutes a weak link of the Josephson junction.
REFERENCES:
patent: 5157466 (1992-10-01), Char et al.
Applied Physics Letters, vol. 59, No. 17, 21 Oct. 1991 pp. 2177-2179 Char K. et al., "Extension of the bi-epitaxial Josephson Junction Process to Various Substrates".
Applied Physics Letters, vol. 59, No. 6, 5 Aug. 1991, pp. 733-735, K. Char et al., "Bi-epitaxial grain boundary junctions in YBa2Cu307".
IEEE Transactions on Magnetics, vol. 27, No. 2, Mar. 1991, pp. 3320-3323, Suzuki et al., "Josephson effect and small-angle grain boundary in YBCO thin film bridge" & Applied Superconductivity Conference, 24 Sep. 1990 Snowmass pp. 3320-3321.
Physica C. vol. 190, No. 2, Dec. 1991 pp. 75-78, Suzuki et al. "Natural and artificial grain boundaries of YBCO thin films for Josephson junctions".
Proceedings of the SPIE, vol. 1477, 1991, pp. 205-208, Bourne et al. "High Temperature Superconducting Josephson Mixers from deliberate grain boundaries in Tl2CaBa2Cu208".
Iiyama Michitomo
Inada Hiroshi
Tanaka So
Kerins John C.
Powell William
Sumitomo Electric Industries Ltd.
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