Patent
1978-07-20
1983-02-01
Edlow, Martin H.
357 20, 357 56, H01L 2712
Patent
active
043718825
ABSTRACT:
A controlled environment process for making diode arrays by depositing the sublimate of a semiconductor material through an aperture of a mask placed nearby a substrate and then subjecting part of the sublimate to ion implantation. The aperture causes diffraction of the sublimate vapor stream, while the proximity of the edges of the aperature to the substrate causes the central plateau of the deposited thin-film to have a rounded rim leading to sides that taper smoothly in thickness to the substrate. Ion implantation to a controlled depth creates an isolated planar junction. Surface layers of a gold electrode running onto the substrate from different surface areas of the thin-film provide for off-mesa bonding of electrical leads.
REFERENCES:
patent: 4127860 (1978-11-01), Beelitz et al.
Sze, Physics of Semiconductor Devices, Wiley-Interscience, New York, 1969, p. 567-569.
Bis Richard F.
Morris Hayden
Branning A. L.
Bushnell R. E.
Edlow Martin H.
Sciascia R. S.
The United States of America as represented by the Secretary of
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