Process for preparing insulated gate semiconductor

Details Process for preparing insulated gate semiconductor Process for preparing insulated gate semiconductor

1976-12-30

1978-08-29

Dost, Gerald A.

Metal working

Method of mechanical manufacture

Assembling or joining

B01J 1700

Patent

active

041093712

ABSTRACT:
An insulated gate semiconductor is prepared by forming auxiliary regions for source-drain regions having a shallow junction by a self-aligning process using a gate electrode as a mask; covering it with a thick insulating membrane for surface protection; forming a contact hole for bonding an electrode in the thick insulating membrane; and forming source-drain regions having deep junction through the contact hole and bonding an electrode metal to it in the contact hole.

REFERENCES:
patent: 3679492 (1972-07-01), Fang et al.
patent: 3920481 (1975-11-01), Hu
patent: 4033026 (1977-07-01), Pashley

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