Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-07-15
1993-06-15
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505742, 505728, 427 62, 427 63, 427 96, 1566611, 156653, B05D 512
Patent
active
052198308
ABSTRACT:
A process for preparing high-Tc superconducting integrated circuits by using a method in which a thin surface layer of non-superconducting tetragonal YBa.sub.2 Cu.sub.3 Oy wafer is selectively transformed into a superconducting orthorhombic phase by oxygen-diffusion. The superconducting orthorhombic islands are surrounded with non-superconducting tetragonal phases and these are electrically isolated from each other. The process results in the formation of superconducting integrated circuits which are inexpensive and are high in quality.
REFERENCES:
patent: 4933318 (1990-06-01), Heijman
patent: 4959345 (1990-09-01), Yamazaki
patent: 4994437 (1991-02-01), Torii et al.
Yoshida et al, "Monolithic device fabrication using high-Tc superconductor" International Electron Devices Meeting (San Francisco, CA) Dec. 11-14, 1988 pp. 282-285.
Rao et al, "Oxygen Stoichiometry and Structure of YBa.sub.2 Cu.sub.3 O.sub.7-8 and their relation to superconductivity", Mat. Res. Bull, vol. 23, 1988 pp. 125-131.
Jeong Ju Y.
Park Sang C.
Yoon Seok Y.
Beck Shrive
King Roy V.
Samsung Electro-Mechanics
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