Process for preparing high purity aluminum nitride

Chemistry of inorganic compounds – Nitrogen or compound thereof – Binary compound

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C01B 2106

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048063304

ABSTRACT:
Process for producing high purity aluminum nitride powder by reacting aluminum sulfide with gaseous ammonia at an intermediate temperature (about 700.degree. C.) and holding at that temperature until an intermediate product (Al.sub.x N.sub.y S.sub.z) is formed where x, y, and z are integers; then further heating to a temperature above 1100.degree. C. and reacting with gaseous ammonia. A high purity, low oxygen containing, free flowing powder is produced. A posttreatment using a carbon source such as graphite further reduces the oxygen content. The oxygen content can be further reduced by reacting the aluminum nitride formed with carbon at about 1600.degree. C.

REFERENCES:
patent: 3307908 (1967-03-01), Mandorf
patent: 3450499 (1969-06-01), Yates
Myakinenkov et al, "Preparation of AIN", Inorganic Materials, vol. 10, No. 10, pp. 1635, 1636, Oct. 1974 (published Mar. 1975), Plenum Publishing Corporation.
Iwama et al, "Ultrafine Powders of TiN and AIN Produced by a Reactive Gas Evaporation Technique with Electron Beam Heating", Journal of Crystal Growth, 56 (1982), pp. 265-269, North-Holland Publishing Co.
Handbook of Chemistry and Physics, 55th Edition, p. B-64 (1974), Chemical Rubber Co.

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