Process for preparing high-purity .alpha.-type silicon nitride

Details Process for preparing high-purity .alpha.-type silicon nitride Process for preparing high-purity .alpha.-type silicon nitride

1981-01-05

1982-08-24

Cooper, Jack

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423406, C01B 21068

Patent

active

043460682

ABSTRACT:
High-purity .alpha.-type silicon nitride comprised of a granular crystal having an .alpha.-phase content of at least 95%, a nitrogen content of at least 38% by weight and an average particle size of not larger than 3 .mu.m is provided. This high-purity .alpha.-type silicon nitride is prepared by heating a nitrogen-containing silane compound at a temperature of at least about 1,300.degree. C. in a heating furnace comprised of a material containing a metal having a melting point exceeding 1,600.degree. C. and capable of being bonded with oxygen at the heating temperature.

REFERENCES:
patent: 4208215 (1980-06-01), Kleiner et al.
Mitomo et al., "Yogyo-Kyokai-Shi"82, No. 942, 1974, pp. 144-145.

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