Process for preparing high crystallinity oxide thin film

Details Process for preparing high crystallinity oxide thin film Process for preparing high crystallinity oxide thin film

1994-07-01

1996-03-26

Wilczewski, Mary

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Using an energy beam or field, a particle beam or field, or...

117949, 505238, 437 42, C30B 2308, C23C 1408, C04B 3500

Patent

active

055011756

ABSTRACT:
A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O.sub.2 including O.sub.3 can be supplied near the substrate so that pressure around the substrate can be increased while maintaining high vacuum near an evaporation source and Knudsen cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K cell evaporation sources and an oxidizing gas is locally supplied to the vicinity of the substrate.

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