Process for preparing group Ib-IIIa-VIa semiconducting films

Details Process for preparing group Ib-IIIa-VIa semiconducting films Process for preparing group Ib-IIIa-VIa semiconducting films

1995-11-30

1997-10-07

Weisstuch, Aaron

Coating processes

Electrical product produced

Photoelectric

427 74, 437 5, 437234, 437247, 136264, 136265, H01L 3118

Patent

active

056745559

ABSTRACT:
Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells.

REFERENCES:
patent: 4915745 (1990-04-01), Pollock et al.
patent: 5028274 (1991-07-01), Basol et al.
patent: 5356839 (1994-10-01), Tuttle et al.
patent: 5436204 (1995-07-01), Albin et al.
Marudachalam et al., "Characterization of Cu-In-Ga Precursors Used to Form Cu(In,Ga)Se.sub.2 Films," WPEC (Dec. 1994), 234-237.
Marudachalam et al., "Preparation of Homogenous Cu(InGa)Se.sub.2 Films by Selenization of Metal Precursors in H.sub.2 Se Atmosphere," Appl. Phys. Lett. (Dec. 1995), 67:3978-3980.

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